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PEDE-479 STATIC AND DYNAMIC CHARACTERISTICS OF IGBT AND MOSFET

SKU:PEDE-479

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PEDE-479 STATIC AND DYNAMIC CHARACTERISTICS OF IGBT AND MOSFET

SCOPE OF LEARNING:
Study of V-I Characteristics of IGBT
Study of V-I Characteristics of MOSFET
Study of Gate Drive Characteristics of IGBT
Study of Gate Drive Characteristics of MOSFET

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TECHNICAL SPECIFICATIONS:
Digital Meters:
Voltmeter 20VDC.
Ammeter 200mA DC.
Voltmeter 200V DC.
Power Supplies:
DC Supply IC Regulated 0-10V DC, 150mA.
DC Supply IC Regulated 0-30V DC, 150mA.
Operated on Mains power 230V, 50Hz +10%
Components are mounted on the panels are:
IGBT 25N120 (2Nos.).
MOSFET 1RF540 (2Nos.)
Voltage Control through Potentiometer.
PWM Pulse Generator Circuit.
Frequency Control Through Potentiometer
PWM Control Through Potentiometer
Resistors for Load
SALIENT FEATURES:
Protection Cover
Front panel built with high class insulated Printed Circuit Board sheet with well printed circuits and symbols.
Fuse for Short Circuit protection
Instruction manual.
Connections are brought out through 2mm Colored Sockets.
Patch Cords 2mm.
The trainer is housed in ABS Plastic cabinet.
Size of the trainer set 12”x 8”
OPTIONAL ACCESSORIES:
Multimeter

 

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